sm-8 dual npn medium power darlington transistors issue 1 - november 1995 partmarking detail ? t605 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 140 v collector-emitter voltage v ceo 120 v emitter-base voltage v ebo 10 v peak pulse current i cm 4a continuous collector current i c 1a operating and storage temperature range t j :t stg -55 to +150 c thermal characteristics parameter symbol value unit total power dissipation at t amb = 25c* any single die ?on? both die ?on? equally p tot 2.25 2.75 w w derate above 25c* any single die ?on? both die ?on? equally 18 22 mw/ c mw/ c thermal resistance - junction to ambient* any single die ?on? both die ?on? equally 55.6 45.5 c/ w c/ w * the power which can be dissipated assuming the device is mounted in a typical manner on a pcb with copper equal to 2 inches square. zdt605 3 - 324 zdt605 c 1 c 1 c 2 c 2 b 1 e 1 b 2 e 2 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo 140 v i c =100 m a collector-emitter breakdown voltage v ceo(sus) 120 v i c =10ma* emitter-base breakdown voltage v (br)ebo 10 v i e =100 m a collector cutoff current i cbo 0.01 10 m a m a v cb =120v v cb =120v, t amb =100c collector cutoff current i ces 10 m a v ces =120v emitter cutoff current i ebo 0.1 m a v eb =8v collector-emitter saturation voltage v ce(sat) 1.0 1.5 v v i c =250ma, i b =0.25ma* i c =1a, i b =1ma* base-emitter saturation voltage v be(sat) 1.8 v i c =1a, i b =1ma* base-emitter turnon voltage v be(on) 1.7 v i c =1a, v ce =5v* static forward current transfer ratio h fe 2k 5k 2k 0.5k 100k i c =50ma, v ce =5v* i c =500ma, v ce =5v* i c =1a, v ce =5v* i c =2a, v ce =5v* transition frequency f t 150 mhz i c =100ma, v ce =10v f=20mhz input capacitance c ibo 90 typical pf v eb =0.5v, f=1mhz output capacitance c obo 15 typical pf v ce =10v, f=1mhz switching times t on 0.5 typical m s i c =0.5a, v ce =10v i b1 =i b2 =0.5ma t off 1.6 typical m s *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% 3 - 325 sm-8 (8 lead sot223)
sm-8 dual npn medium power darlington transistors issue 1 - november 1995 partmarking detail ? t605 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 140 v collector-emitter voltage v ceo 120 v emitter-base voltage v ebo 10 v peak pulse current i cm 4a continuous collector current i c 1a operating and storage temperature range t j :t stg -55 to +150 c thermal characteristics parameter symbol value unit total power dissipation at t amb = 25c* any single die ?on? both die ?on? equally p tot 2.25 2.75 w w derate above 25c* any single die ?on? both die ?on? equally 18 22 mw/ c mw/ c thermal resistance - junction to ambient* any single die ?on? both die ?on? equally 55.6 45.5 c/ w c/ w * the power which can be dissipated assuming the device is mounted in a typical manner on a pcb with copper equal to 2 inches square. zdt605 3 - 324 zdt605 c 1 c 1 c 2 c 2 b 1 e 1 b 2 e 2 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo 140 v i c =100 m a collector-emitter breakdown voltage v ceo(sus) 120 v i c =10ma* emitter-base breakdown voltage v (br)ebo 10 v i e =100 m a collector cutoff current i cbo 0.01 10 m a m a v cb =120v v cb =120v, t amb =100c collector cutoff current i ces 10 m a v ces =120v emitter cutoff current i ebo 0.1 m a v eb =8v collector-emitter saturation voltage v ce(sat) 1.0 1.5 v v i c =250ma, i b =0.25ma* i c =1a, i b =1ma* base-emitter saturation voltage v be(sat) 1.8 v i c =1a, i b =1ma* base-emitter turnon voltage v be(on) 1.7 v i c =1a, v ce =5v* static forward current transfer ratio h fe 2k 5k 2k 0.5k 100k i c =50ma, v ce =5v* i c =500ma, v ce =5v* i c =1a, v ce =5v* i c =2a, v ce =5v* transition frequency f t 150 mhz i c =100ma, v ce =10v f=20mhz input capacitance c ibo 90 typical pf v eb =0.5v, f=1mhz output capacitance c obo 15 typical pf v ce =10v, f=1mhz switching times t on 0.5 typical m s i c =0.5a, v ce =10v i b1 =i b2 =0.5ma t off 1.6 typical m s *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% 3 - 325 sm-8 (8 lead sot223)
typical characteristics v ce(sat) v i c i c - collector current (amps) v - (v ol ts) 0 0.4 0.01 0.1 10 1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i c - collector current (amps) v be(sat) v i c v - (v ol ts) 0.6 0.01 10 0.1 1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i c /i b =100 i c /i b =100 i c - collector current (amps) h fe v i c h - g a in n or m a l i se d t o 1 a m p 0.001 0.01 10 0.1 1 0.5 1.0 1.5 2.0 2.5 v ce =5v i c - collector current (amps) v be(on) v i c v - (v o lts) 0.6 1.0 1.4 1.8 0.01 0.1 110 v ce =5v -55c +25c +100c 0.4 0.8 1.2 1.6 2.2 0.2 -55c +25c +100c +175c -55c +25c +100c +175c 0.4 -55c +25c +100c 2.2 2.0 zdt605 3 - 326
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